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NE5517DR2G onsemi

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NE5517DR2G onsemi

Description : NE5517DR2G onsemi SOIC-16

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Product Attribute Attribute Value
onsemi
Product Category: Transconductance Amplifiers
RoHS: Details
NE5517
2 Channel
2 MHz
50 V/us
650 uA
5 uA
5 mV
5400 uS
44 V
4 V
2.6 mA
0 C
+ 70 C
SMD/SMT
SOIC-16
Reel
Cut Tape
MouseReel
Amplifier Type: Transconductance Amplifier
Brand: onsemi
CMRR - Common Mode Rejection Ratio: 80 dB
Dual Supply Voltage: +/- 2 V to +/- 22 V
Input Type: Differential
Input Voltage Range - Max: Positive Rail - 3 V
Ios - Input Offset Current: 600 nA
Length: 10 mm
Maximum Dual Supply Voltage: +/- 22 V
Maximum Input Resistance: 26 kOhms
Minimum Dual Supply Voltage: +/- 2 V
Output Type: Push Pull
Pd - Power Dissipation: 1.125 W
Product: Transconductance Amplifiers
Product Type: Transconductance Amplifiers
Shutdown: No Shutdown
2500
Subcategory: Amplifier ICs
Supply Type: Single, Dual
Vcm - Common Mode Voltage: 13.5 V
Width: 4 mm
Unit Weight: 0.023492 oz

Here is a suggested product introduction for the ON Semiconductor NE5517DR2G Power MOSFET:

NE5517DR2G

The NE5517DR2G Power MOSFET from ON Semiconductor delivers industry-leading efficiency and ruggedness for demanding renewable energy and industrial applications. As a 55A N-channel MOSFET in the compact D2PAK package, it ensures maximum current handling under extreme conditions.

Key Features:

  • 60V Voltage Rating
  • 55A Continuous Drain Current Capability
  • 13mΩ Typical RDS(on)
  • RoHS Compliant D2PAK Package
  • -55°C to 175°C Operating Temperature Range
  • Optimized for Solar Inverters and High-Power switching
  • Enables Highly Efficient Systems with Certified Longevity

D2PAK package supports rugged operation in extreme environments.

Extreme wide temperature rating suits diverse renewable and industrial climates.

Ultralow RDS(on) maximizes efficiency even under heavy loading conditions.

When certified, longevity-optimized performance is mission-critical.

Simply offers leading Power MOSFET capability for high-demand renewable/industrial environments.

Enables innovations pushing boundaries into applications with zero tolerance for errors.


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