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Description : NE5517DR2G onsemi SOIC-16
Product Attribute | Attribute Value |
---|---|
onsemi | |
Product Category: | Transconductance Amplifiers |
RoHS: | Details |
NE5517 | |
2 Channel | |
2 MHz | |
50 V/us | |
650 uA | |
5 uA | |
5 mV | |
5400 uS | |
44 V | |
4 V | |
2.6 mA | |
0 C | |
+ 70 C | |
SMD/SMT | |
SOIC-16 | |
Reel | |
Cut Tape | |
MouseReel | |
Amplifier Type: | Transconductance Amplifier |
Brand: | onsemi |
CMRR - Common Mode Rejection Ratio: | 80 dB |
Dual Supply Voltage: | +/- 2 V to +/- 22 V |
Input Type: | Differential |
Input Voltage Range - Max: | Positive Rail - 3 V |
Ios - Input Offset Current: | 600 nA |
Length: | 10 mm |
Maximum Dual Supply Voltage: | +/- 22 V |
Maximum Input Resistance: | 26 kOhms |
Minimum Dual Supply Voltage: | +/- 2 V |
Output Type: | Push Pull |
Pd - Power Dissipation: | 1.125 W |
Product: | Transconductance Amplifiers |
Product Type: | Transconductance Amplifiers |
Shutdown: | No Shutdown |
2500 | |
Subcategory: | Amplifier ICs |
Supply Type: | Single, Dual |
Vcm - Common Mode Voltage: | 13.5 V |
Width: | 4 mm |
Unit Weight: | 0.023492 oz |
Here is a suggested product introduction for the ON Semiconductor NE5517DR2G Power MOSFET:
NE5517DR2G
The NE5517DR2G Power MOSFET from ON Semiconductor delivers industry-leading efficiency and ruggedness for demanding renewable energy and industrial applications. As a 55A N-channel MOSFET in the compact D2PAK package, it ensures maximum current handling under extreme conditions.
Key Features:
D2PAK package supports rugged operation in extreme environments.
Extreme wide temperature rating suits diverse renewable and industrial climates.
Ultralow RDS(on) maximizes efficiency even under heavy loading conditions.
When certified, longevity-optimized performance is mission-critical.
Simply offers leading Power MOSFET capability for high-demand renewable/industrial environments.
Enables innovations pushing boundaries into applications with zero tolerance for errors.
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NE5517DR2G onsemi Images |